AON6428 Datasheet and Replacement
Type Designator: AON6428
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DFN5X6
AON6428 substitution
AON6428 Datasheet (PDF)
aon6428.pdf

AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6424.pdf

AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6426.pdf

AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6422.pdf

AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
Datasheet: AON6405 , AON6407 , AON6411 , AON6413 , AON6414A , AON6416 , AON6424 , AON6426 , IRLB4132 , AON6435 , AON6440 , AON6442 , AON6444 , AON6448 , AON6450 , AON6452 , AON6454A .
History: IRFN130 | FDMS7670AS | FDMS86300 | MDS3754ARH | IRFM350 | FDMS6673BZ | OSG60R260IF
Keywords - AON6428 MOSFET datasheet
AON6428 cross reference
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History: IRFN130 | FDMS7670AS | FDMS86300 | MDS3754ARH | IRFM350 | FDMS6673BZ | OSG60R260IF



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