All MOSFET. AON6428 Datasheet

 

AON6428 Datasheet and Replacement


   Type Designator: AON6428
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN5X6
 

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AON6428 Datasheet (PDF)

 ..1. Size:301K  aosemi
 aon6428.pdf pdf_icon

AON6428

AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 8.1. Size:390K  aosemi
 aon6424.pdf pdf_icon

AON6428

AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 8.2. Size:149K  aosemi
 aon6426.pdf pdf_icon

AON6428

AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)

 8.3. Size:155K  aosemi
 aon6422.pdf pdf_icon

AON6428

AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)

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History: AON2800 | AON6406 | ZXMN3B04N8 | ZXMN10A25G | ZXMN10A25KTC

Keywords - AON6428 MOSFET datasheet

 AON6428 cross reference
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