All MOSFET. AON6450 Datasheet

 

AON6450 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6450
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: DFN5X6

 AON6450 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6450 Datasheet (PDF)

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 aon6450.pdf

AON6450 AON6450

AON6450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 100VThe AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 ..2. Size:274K  aosemi
 aon6450.pdf

AON6450 AON6450

AON6450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS 100VThe AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.1. Size:562K  aosemi
 aon6458.pdf

AON6450 AON6450

AON6458250V,14A N-Channel MOSFETGeneral Description Product SummaryThe AON6458 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of VDS 300V@150performance and robustness in popular AC-DC ID (at VGS=10V) 14Aapplications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)

 8.2. Size:399K  aosemi
 aon6452.pdf

AON6450 AON6450

AON6452100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.3. Size:251K  aosemi
 aon6454a.pdf

AON6450 AON6450

AON6454A150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AON6454A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 31Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 8.4. Size:239K  aosemi
 aon6454.pdf

AON6450 AON6450

AON6454150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AON6454 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NVBG080N120SC1 | AOWF15S60 | BRCS250C03MF | WMR12N03T1

 

 
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