AON6450 MOSFET Datasheet: N-Ch, 100V, 52A. Full specification with pinout and replacement list

AON6450 Specs and Replacement

Type Designator: AON6450

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: DFN5X6

AON6450 substitution

- MOSFET ⓘ Cross-Reference Search

AON6450 datasheet

..1. Size:643K 1
aon6450.pdf pdf_icon

AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:274K aosemi
aon6450.pdf pdf_icon

8.1. Size:562K aosemi
aon6458.pdf pdf_icon

AON6458 250V,14A N-Channel MOSFET General Description Product Summary The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 14A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:399K aosemi
aon6452.pdf pdf_icon

AON6452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒