AON6502
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6502
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 1327
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022
Ohm
Package:
DFN5X6
AON6502
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6502
Datasheet (PDF)
..1. Size:276K aosemi
aon6502.pdf
AON650230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:204K 1
aon6508.pdf
AON650830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:204K aosemi
aon6508.pdf
AON650830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:275K aosemi
aon6500.pdf
AON650030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)
8.4. Size:206K aosemi
aon6504.pdf
AON650430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
8.5. Size:291K aosemi
aon6506.pdf
AON650630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 36A Low Gate Charge RDS(ON) (at VGS=10V)
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