All MOSFET. AON6506 Datasheet

 

AON6506 Datasheet and Replacement


   Type Designator: AON6506
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 1204 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: DFN5X6
 

 AON6506 substitution

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AON6506 Datasheet (PDF)

 ..1. Size:291K  aosemi
 aon6506.pdf pdf_icon

AON6506

AON650630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 36A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:204K  1
 aon6508.pdf pdf_icon

AON6506

AON650830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:204K  aosemi
 aon6508.pdf pdf_icon

AON6506

AON650830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:275K  aosemi
 aon6500.pdf pdf_icon

AON6506

AON650030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AON6454A , AON6458 , AON6482 , AON6484 , AON6486 , AON6500 , AON6502 , AON6504 , 5N65 , AON6508 , AON6510 , AON6512 , AON6516 , AON6518 , AON6520 , AON6522 , AON6524 .

Keywords - AON6506 MOSFET datasheet

 AON6506 cross reference
 AON6506 equivalent finder
 AON6506 lookup
 AON6506 substitution
 AON6506 replacement

 

 
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