AON6524 Datasheet and Replacement
Type Designator: AON6524
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 427 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: DFN5X6
AON6524 substitution
AON6524 Datasheet (PDF)
aon6524.pdf

AON652430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V)
aon6520.pdf

AON652030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6520 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6526.pdf

AON652630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aon6528.pdf

AON652830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6506 , AON6508 , AON6510 , AON6512 , AON6516 , AON6518 , AON6520 , AON6522 , 10N65 , AON6526 , AON6530 , AON6532 , AON6536 , AON6538 , AON6544 , AON6552 , AON6554 .
History: QM2404C1 | IPP65R380E6 | MX2N4857 | ELM57801GA | DH3205A | ELM56800EA | HY3312PM
Keywords - AON6524 MOSFET datasheet
AON6524 cross reference
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History: QM2404C1 | IPP65R380E6 | MX2N4857 | ELM57801GA | DH3205A | ELM56800EA | HY3312PM



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