AON6576 Datasheet and Replacement
Type Designator: AON6576
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 26
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 530
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047
Ohm
Package:
DFN5X6
- MOSFET Cross-Reference Search
AON6576 Datasheet (PDF)
..1. Size:299K 1
aon6576.pdf 
AON657630V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:299K aosemi
aon6576.pdf
AON657630V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:314K aosemi
aon6572.pdf
AON657230V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:282K 1
aon6512.pdf
AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:204K 1
aon6508.pdf
AON650830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:299K aosemi
aon6534.pdf
AON653430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:282K aosemi
aon6512.pdf
AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:204K aosemi
aon6508.pdf
AON650830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:275K aosemi
aon6500.pdf
AON650030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)
9.7. Size:248K aosemi
aon6520.pdf
AON652030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6520 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
9.8. Size:355K aosemi
aon6590a.pdf
AON6590A40V N-Channel MOSFETGeneral Description Product SummaryVDS40V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 300A Low Gate Charge RDS(ON) (at VGS=10V)
9.9. Size:340K aosemi
aon6586.pdf
AON658630V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:288K aosemi
aon6530.pdf
AON653030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 72A Low Gate Charge RDS(ON) (at VGS=10V)
9.11. Size:299K aosemi
aon6542.pdf
AON654230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
9.12. Size:536K aosemi
aon6548.pdf
AON654830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.13. Size:340K aosemi
aon6596.pdf
AON659630V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V)
9.14. Size:291K aosemi
aon6510.pdf
AON651030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.15. Size:206K aosemi
aon6504.pdf
AON650430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.16. Size:312K aosemi
aon6532.pdf
AON653230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V)
9.17. Size:288K aosemi
aon6538.pdf
AON653830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 75A Low Gate Charge RDS(ON) (at VGS=10V)
9.18. Size:358K aosemi
aon6594.pdf
AON659430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V)
9.19. Size:301K aosemi
aon6558.pdf
AON655830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
9.20. Size:217K aosemi
aon6590.pdf
AON659040V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
9.21. Size:426K aosemi
aon6544.pdf
AON654430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.22. Size:305K aosemi
aon6526.pdf
AON652630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.23. Size:327K aosemi
aon6536.pdf
AON653630V N-Channel MOSFETGeneral Description Product SummaryThe AON6536 combines advanced trench MOSFETtechnology with a low resistance package to provideVDS30Vextremely low RDS(ON). This device is ideal for load switch ID (at VGS=10V) 55Aand battery protection applications. RDS(ON) (at VGS=10V)
9.24. Size:456K aosemi
aon6524.pdf
AON652430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V)
9.25. Size:302K aosemi
aon6552.pdf
AON655230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
9.26. Size:441K aosemi
aon6554.pdf
AON655430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.27. Size:450K aosemi
aon6566.pdf
AON656630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.28. Size:293K aosemi
aon6518.pdf
AON651830V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.29. Size:342K aosemi
aon6560.pdf
AON656030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)
9.30. Size:358K aosemi
aon6528.pdf
AON652830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
9.31. Size:276K aosemi
aon6502.pdf
AON650230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.32. Size:306K aosemi
aon6516.pdf
AON651630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.33. Size:280K aosemi
aon6522.pdf
AON652225V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)
9.34. Size:291K aosemi
aon6506.pdf
AON650630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 36A Low Gate Charge RDS(ON) (at VGS=10V)
9.35. Size:291K aosemi
aon6588.pdf
AON658830V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.36. Size:295K aosemi
aon6514.pdf
AON651430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
History: FDMS9620S
| IRFI7536G
| WMM11N80M3
| AM2314NE
Keywords - AON6576 MOSFET datasheet
AON6576 cross reference
AON6576 equivalent finder
AON6576 lookup
AON6576 substitution
AON6576 replacement
