AON6910A PDF and Equivalents Search

 

AON6910A Specs and Replacement

Type Designator: AON6910A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31(52) W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V

|Id| ⓘ - Maximum Drain Current: 37(80) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8(4.5) nS

Cossⓘ - Output Capacitance: 220(340) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014(0.0041) Ohm

Package: DFN5X6B

AON6910A substitution

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AON6910A datasheet

 ..1. Size:424K  aosemi
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AON6910A

AON6910A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6910A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V) 37A Power DFN5x6B package. The Q1 "High Side" MOSFET is ... See More ⇒

 8.1. Size:394K  aosemi
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AON6910A

AON6918 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6918 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:545K  aosemi
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AON6910A

AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:566K  aosemi
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AON6910A

AON6912 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON6782, AON6810, AON6812, AON6816, AON6850, AON6884, AON6906A, AON6908A, EMB04N03H, AON6912A, AON6918, AON6920, AON6922, AON6924, AON6926, AON6928, AON6932A

Keywords - AON6910A MOSFET specs

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