AON6924 MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6924
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31(104) W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 60(85) A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 16(17) nS
Cossⓘ - Output Capacitance: 530(900) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052(0.0016) Ohm
Package: DFN5X6A
AON6924 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6924 Datasheet (PDF)
aon6924.pdf
AON692430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6924 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6926.pdf
AON692630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ2Q1The AON6926 is designed to provide a high efficiency 30Vsynchronous buck power stage with optimal layout and VDS 30Vboard space utilization. It includes two specialized 50A ID (at VGS=10V)44AMOSFETs in a dual Power DFN5x6A package. The Q1
aon6922.pdf
AON692225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6922 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 25V 25Vboard space utilization. It includes two specialized ID (at VGS=10V) 71A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6920.pdf
AON692030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON6920 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 60A 85AMOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)
aon6928.pdf
AON692830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 36A High Current Capability RDS(ON) (at VGS=10V)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: KO3402 | FW811 | SI2304 | KNY3303A | SI2305DS | APT6025BVFR | HGM059N08AL
History: KO3402 | FW811 | SI2304 | KNY3303A | SI2305DS | APT6025BVFR | HGM059N08AL
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918