All MOSFET. AON6936 Datasheet

 

AON6936 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6936
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31(83) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 32(44) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21.8(28.5) nS
   Cossⓘ - Output Capacitance: 485(1979) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049(0.002) Ohm
   Package: DFN5X6B

 AON6936 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6936 Datasheet (PDF)

 ..1. Size:705K  aosemi
 aon6936.pdf

AON6936 AON6936

AON693630V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V)

 8.1. Size:520K  aosemi
 aon6934.pdf

AON6936 AON6936

AON693430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)

 8.2. Size:551K  aosemi
 aon6938.pdf

AON6936 AON6936

AON693830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V)

 8.3. Size:503K  aosemi
 aon6932.pdf

AON6936 AON6936

AON693230V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)

 8.4. Size:616K  aosemi
 aon6932a.pdf

AON6936 AON6936

AON6932A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)

 8.5. Size:633K  aosemi
 aon6934a.pdf

AON6936 AON6936

AON6934A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUZ103S-4

 

 
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