All MOSFET. AON6974A Datasheet

 

AON6974A Datasheet and Replacement


   Type Designator: AON6974A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31(33) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 28(32) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.3(4) nS
   Cossⓘ - Output Capacitance: 441(913) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052(0.0033) Ohm
   Package: DFN5X6B
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AON6974A Datasheet (PDF)

 ..1. Size:482K  aosemi
 aon6974a.pdf pdf_icon

AON6974A

AON6974A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:648K  aosemi
 aon6974.pdf pdf_icon

AON6974A

AON697430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:476K  aosemi
 aon6978.pdf pdf_icon

AON6974A

AON697830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:529K  aosemi
 aon6970.pdf pdf_icon

AON6974A

AON697030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)

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History: TK2P60D | IRFBG20

Keywords - AON6974A MOSFET datasheet

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