AON6974A Specs and Replacement

Type Designator: AON6974A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31(33) W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28(32) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3(4) nS

Cossⓘ - Output Capacitance: 441(913) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052(0.0033) Ohm

Package: DFN5X6B

AON6974A substitution

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AON6974A datasheet

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AON6974A

AON6974A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6974A

AON6974 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6974A

AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6974A

AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AON6928, AON6932A, AON6934A, AON6936, AON6938, AON6946, AON6970, AON6973A, IRF540, AON6978, AON6980, AON7200, AON7210, AON7220, AON7240, AON7242, AON7244

Keywords - AON6974A MOSFET specs

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