All MOSFET. AON7414 Datasheet

 

AON7414 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON7414
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 15.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN3X3EP

 AON7414 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON7414 Datasheet (PDF)

 ..1. Size:288K  aosemi
 aon7414.pdf

AON7414 AON7414

AON741430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 8.1. Size:338K  1
 aon7410.pdf

AON7414 AON7414

AON741030V N-Channel MOSFETGeneral Description FeaturesThe AON7410 uses advanced trench technology and design VDS (V) = 30Vto provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)device is suitable for use in DC - DC converters and Load RDS(ON)

 8.2. Size:257K  1
 aon7418.pdf

AON7414 AON7414

AON741830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:338K  aosemi
 aon7410.pdf

AON7414 AON7414

AON741030V N-Channel MOSFETGeneral Description FeaturesThe AON7410 uses advanced trench technology and design VDS (V) = 30Vto provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)device is suitable for use in DC - DC converters and Load RDS(ON)

 8.4. Size:385K  aosemi
 aon7416.pdf

AON7414 AON7414

AON741630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7416 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 40Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 8.5. Size:257K  aosemi
 aon7418.pdf

AON7414 AON7414

AON741830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 8.6. Size:247K  aosemi
 aon7412.pdf

AON7414 AON7414

AON741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7412 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 16Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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