AON7450 Specs and Replacement
Type Designator: AON7450
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 43
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Id| ⓘ - Maximum Drain Current: 21
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 6.5
nS
Cossⓘ -
Output Capacitance: 95
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048
Ohm
Package:
DFN3X3EP
-
MOSFET ⓘ Cross-Reference Search
AON7450 datasheet
..1. Size:268K aosemi
aon7450.pdf 
AON7450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON7450 is fabricated with SDMOSTM trench ID (at VGS=10V) 21A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) ... See More ⇒
8.1. Size:242K aosemi
aon7452.pdf
AON7452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON7452 is fabricated with SDMOSTM trench ID (at VGS=10V) 5.5A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) ... See More ⇒
8.2. Size:524K aosemi
aon7458.pdf
AON7458 250V,5A N-Channel MOSFET General Description Product Summary The AON7458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 5A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V) ... See More ⇒
9.1. Size:267K 1
aon7421.pdf
AON7421 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) ... See More ⇒
9.2. Size:319K 1
aon7405.pdf
AON7405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V) ... See More ⇒
9.3. Size:465K 1
aon7423.pdf
AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V) ... See More ⇒
9.4. Size:338K 1
aon7410.pdf
AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON) ... See More ⇒
9.5. Size:262K 1
aon7408.pdf
AON7408 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A This device is suitable for use in general purpose RDS(ON) (at VGS=10V) ... See More ⇒
9.6. Size:270K 1
aon7406.pdf
AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V) ... See More ⇒
9.7. Size:172K 1
aon7403.pdf
AON7403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) ... See More ⇒
9.9. Size:257K 1
aon7418.pdf
AON7418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.10. Size:323K 1
aon7409.pdf
AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) ... See More ⇒
9.11. Size:269K 1
aon7401.pdf
AON7401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) ... See More ⇒
9.12. Size:495K 1
aon7407.pdf
AON7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) ... See More ⇒
9.13. Size:265K aosemi
aon7446.pdf
AON7446 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON7446 is fabricated with SDMOSTM trench ID (at VGS=10V) 8A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) ... See More ⇒
9.14. Size:267K aosemi
aon7421.pdf
AON7421 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) ... See More ⇒
9.15. Size:297K aosemi
aon7462.pdf
AON7462 300V,2.5A N-Channel MOSFET General Description Product Summary The AON7462 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of 350V@150 VDS performance and robustness in popular AC-DC 2.5A ID (at VGS=10V) applications.By providing low RDS(on), Ciss and Crss along with ... See More ⇒
9.16. Size:199K aosemi
aon7400.pdf
AON7400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26A This device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V) ... See More ⇒
9.17. Size:327K aosemi
aon7474a.pdf
AON7474A 75V N-Channel AlphaMOS General Description Product Summary VDS Trench Power MOSFET technology 75V Low RDS(ON) ID (at VGS=10V) 7.5A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.18. Size:268K aosemi
aon7448.pdf
AON7448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON7448 is fabricated with SDMOSTM trench ID (at VGS=10V) 24A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) ... See More ⇒
9.19. Size:319K aosemi
aon7405.pdf
AON7405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V) ... See More ⇒
9.20. Size:238K aosemi
aon7424.pdf
AON7424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7424 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.21. Size:301K aosemi
aon7402.pdf
AON7402 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7402 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
9.22. Size:253K aosemi
aon7442.pdf
AON7442 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.23. Size:313K aosemi
aon7440.pdf
AON7440 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power technology Low RDS(ON) ID (at VGS=10V) 50A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.24. Size:290K aosemi
aon7423.pdf
AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V) ... See More ⇒
9.25. Size:338K aosemi
aon7410.pdf
AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON) ... See More ⇒
9.26. Size:262K aosemi
aon7408.pdf
AON7408 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A This device is suitable for use in general purpose RDS(ON) (at VGS=10V) ... See More ⇒
9.27. Size:288K aosemi
aon7414.pdf
AON7414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.28. Size:385K aosemi
aon7416.pdf
AON7416 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7416 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 40A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
9.29. Size:270K aosemi
aon7406.pdf
AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V) ... See More ⇒
9.30. Size:163K aosemi
aon7428.pdf
AON7428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7428 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50A This device is ideal for load switch and battery protection RDS(ON) (at VGS=10V) ... See More ⇒
9.31. Size:172K aosemi
aon7403.pdf
AON7403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) ... See More ⇒
9.33. Size:352K aosemi
aon7422e.pdf
AON7422E 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.34. Size:259K aosemi
aon7422g.pdf
AON7422G 30V N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.35. Size:386K aosemi
aon7436.pdf
AON7436 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON7436 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 23A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.36. Size:147K aosemi
aon7430l.pdf
AON7430L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and (VGS = 10V) ID = 20A general purpose applications. (VGS = 10V) RDS(ON) ... See More ⇒
9.37. Size:257K aosemi
aon7418.pdf
AON7418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.38. Size:323K aosemi
aon7409.pdf
AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) ... See More ⇒
9.39. Size:247K aosemi
aon7412.pdf
AON7412 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7412 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 16A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.40. Size:269K aosemi
aon7401.pdf
AON7401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) ... See More ⇒
9.41. Size:274K aosemi
aon7426.pdf
AON7426 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.42. Size:153K aosemi
aon7430.pdf
AON7430 30V N-Channel MOSFET General Description Features The AON7430 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and ID = 34A (VGS = 10V) general purpose applications. RDS(ON) ... See More ⇒
9.43. Size:506K aosemi
aon7460.pdf
AON7460 300V,4A N-Channel MOSFET General Description Product Summary The AON7460 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 350V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 4A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V) ... See More ⇒
9.44. Size:344K aosemi
aon7404g.pdf
AON7404G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) ... See More ⇒
9.45. Size:164K aosemi
aon7422l.pdf
AON7422 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40A This device is ideal for load switch and battery protection RDS(ON) (at VGS=10V) ... See More ⇒
9.46. Size:242K aosemi
aon7407.pdf
AON7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) ... See More ⇒
9.47. Size:268K aosemi
aon7432.pdf
AON7432 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7432 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 18A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
9.48. Size:233K aosemi
aon7404.pdf
AON7404 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V) ... See More ⇒
9.49. Size:263K aosemi
aon7444.pdf
AON7444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON7444 is fabricated with SDMOSTM trench ID (at VGS=10V) 33A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) ... See More ⇒
9.50. Size:327K aosemi
aon7466.pdf
AON7466 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7466 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) ... See More ⇒
9.51. Size:1620K cn vbsemi
aon7422l.pdf
AON7422L www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control Industri... See More ⇒
Detailed specifications: AON7428
, AON7430
, AON7432
, AON7436
, AON7440
, AON7444
, AON7446
, AON7448
, IRF530
, AON7452
, AON7458
, AON7460
, AON7462
, AON7466
, AON7474A
, AON7502
, AON7506
.
History: FTK50N06F
| IRFY120
| AGM16N10C
| AO4840
| RD3P050SN
| TK8P60W5
Keywords - AON7450 MOSFET specs
AON7450 cross reference
AON7450 equivalent finder
AON7450 pdf lookup
AON7450 substitution
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