AON7534
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON7534
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 23
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3.3
nS
Cossⓘ -
Output Capacitance: 441
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package:
DFN3X3EP
AON7534
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON7534
Datasheet (PDF)
..1. Size:271K 1
aon7534.pdf
AON753430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:279K aosemi
aon7534.pdf
AON753430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:264K aosemi
aon7532e.pdf
AON7532E30V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:261K aosemi
aon7536.pdf
AON753630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:269K aosemi
aon7530.pdf
AON753030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
8.4. Size:279K aosemi
aon7538.pdf
AON753830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: WPB4002
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