AON7752 MOSFET Datasheet: N-Ch, 30V, 16A. Full specification with pinout and replacement list

AON7752 Specs and Replacement

Type Designator: AON7752

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 275 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: DFN3X3EP

AON7752 substitution

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AON7752 datasheet

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AON7752 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 16A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V) ... See More ⇒

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AON7754 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V) ... See More ⇒

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AON7758 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 75A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V) ... See More ⇒

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AON7788 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON7788 uses advanced trench technology 40A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is ... See More ⇒