AON7760
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON7760
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 34.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 540
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002
Ohm
Package:
DFN3.3X3.3
AON7760
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON7760
Datasheet (PDF)
..1. Size:264K aosemi
aon7760.pdf 
AON776025V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 25V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 75A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
8.1. Size:265K aosemi
aon7764.pdf
AON776430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
9.1. Size:277K aosemi
aon7788.pdf
AON778830V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON7788 uses advanced trench technology 40A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is
9.2. Size:358K aosemi
aon7754.pdf
AON775430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
9.3. Size:273K aosemi
aon7758.pdf
AON775830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 75A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
9.4. Size:296K aosemi
aon7700.pdf
AON770030V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7700 uses advanced trench technology ID (at VGS=10V) 40Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.5. Size:310K aosemi
aon7702b.pdf
AON7702B30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702B uses advanced trench technology ID (at VGS=10V) 20Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.6. Size:283K aosemi
aon7752.pdf
AON775230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 16A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.7. Size:157K aosemi
aon7702a.pdf
AON7702A30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702A uses advanced trench technology ID (at VGS=10V) 36Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.8. Size:283K aosemi
aon7702.pdf
AON770230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702 uses advanced trench technology ID (at VGS=10V) 37Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.9. Size:256K aosemi
aon7784.pdf
AON778430V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7784 uses advanced trench technology ID (at VGS=10V) 50Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON) and low gate charge. This device is RDS(ON) (at VGS=10V)
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
