AON7760 Specs and Replacement

Type Designator: AON7760

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: DFN3.3X3.3

AON7760 substitution

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AON7760 datasheet

 ..1. Size:264K  aosemi
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AON7760

AON7760 25V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 25V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 75A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:265K  aosemi
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AON7760

AON7764 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:277K  aosemi
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AON7760

AON7788 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON7788 uses advanced trench technology 40A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is ... See More ⇒

 9.2. Size:358K  aosemi
aon7754.pdf pdf_icon

AON7760

AON7754 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON7556, AON7611, AON7700, AON7702A, AON7702B, AON7752, AON7754, AON7758, IRF1405, AON7764, AON7784, AON7788, AON7804, AON7810, AON7812, AON7820, AON7826

Keywords - AON7760 MOSFET specs

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