AON7804
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON7804
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 17
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 22
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package: DFN3X3ADUAL
AON7804
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON7804
Datasheet (PDF)
..1. Size:253K 1
aon7804.pdf 
AON780430V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7804 is designed to provide a high efficiency 30V22Asynchronous buck power stage with optimal layout and ID (at VGS=10V)board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)
..2. Size:253K aosemi
aon7804.pdf
AON780430V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7804 is designed to provide a high efficiency 30V22Asynchronous buck power stage with optimal layout and ID (at VGS=10V)board space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)
9.1. Size:229K aosemi
aon7826.pdf
AON782620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7826 is designed to provide a high efficiencysynchronous buck power stage with optimal layout and ID (at VGS=10V) 22Aboard space utilization. It includes two low RDS (ON) RDS(ON) (at VGS=10V)
9.2. Size:292K aosemi
aon7820.pdf
AON782020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7820 combines advanced trench MOSFETtechnology with a low resistance package to provide IS (at VGS=4.5V) 35Aextremely low RSS(ON). This device is ideal for load switch RSS(ON) (at VGS=4.5V)
9.3. Size:292K aosemi
aon7812.pdf
AON781230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:283K aosemi
aon7810.pdf
AON781030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: WPB4002
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