All MOSFET. AON7902 Datasheet

 

AON7902 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON7902
   Type of Transistor: MOSFET
   Type of Control Channel: NN -Channel
   Pdⓘ - Maximum Power Dissipation: 17(50) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 24(40) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3(5) nS
   Cossⓘ - Output Capacitance: 360(520) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021(0.0062) Ohm
   Package: DFN3.3X3.3A

 AON7902 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON7902 Datasheet (PDF)

 ..1. Size:415K  aosemi
 aon7902.pdf

AON7902 AON7902

AON790230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON7902 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 27A 40AMOSFETs in a dual Power DFN3.3x3.3A package. The Q1 RDS(ON) (at VGS=10V)

 8.1. Size:348K  aosemi
 aon7900.pdf

AON7902 AON7902

AON790030V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2Q1The AON7900 is designed to provide a high efficiency 30V 30Vsynchronous buck power stage with optimal layout and VDSboard space utilization. It includes two specialized 40A ID (at VGS=10V)24AMOSFETs in a dual Power DFN3.3x3.3 package. The Q1

 9.1. Size:546K  1
 aon7934.pdf

AON7902 AON7902

AON793430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

 9.2. Size:530K  aosemi
 aon7932.pdf

AON7902 AON7902

AON793230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON7932 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 26A 35AMOSFETs in a dual Power DFN3x3A package. The Q1 RDS(ON) (at VGS=10V)

 9.3. Size:546K  aosemi
 aon7934.pdf

AON7902 AON7902

AON793430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: LP3401LT1G

 

 
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