AOT11N60 Datasheet and Replacement

AOT11N60/AOTF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT11N60 & AOTF11N60 have been fabricated 700V@150using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOT11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

AOT11N70/AOTF11N70700V,11A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT11N70 & AOTF11N70 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOT11N70FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.87(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

AOT1100L/AOB1100L100V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS100VThe AOT1100L/AOB1100L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 130Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

AOT11C60/AOB11C60/AOTF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOT11C60 & AOB11C60 & AOTF11C60 arefabricated using an advanced high voltage MOSFET IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

isc N-Channel MOSFET Transistor AOT11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor AOT1100LFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor AOT11S60LFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu