AOT12N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT12N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 278 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 39.8 nC
Rise Time (tr): 77 nS
Drain-Source Capacitance (Cd): 152 pF
Maximum Drain-Source On-State Resistance (Rds): 0.72 Ohm
Package: TO-220
AOT12N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT12N65 Datasheet (PDF)
1.1. aot12n65.pdf 
Size:381K _aosemi
AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a
3.1. aot12n60fd.pdf Size:590K _aosemi
AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing
3.2. aot12n60.pdf Size:450K _aosemi
AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.55Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al
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