All MOSFET. AOT20N60 Datasheet

 

AOT20N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT20N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 417 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 125 nS

Drain-Source Capacitance (Cd): 273 pF

Maximum Drain-Source On-State Resistance (Rds): 0.37 Ohm

Package: TO-220

AOT20N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT20N60 Datasheet (PDF)

1.1. aot20n60.pdf Size:540K _aosemi

AOT20N60
AOT20N60

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.2. aot20n60l.pdf Size:540K _aosemi

AOT20N60
AOT20N60

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

 4.1. aot20n25.pdf Size:285K _aosemi

AOT20N60
AOT20N60

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

4.2. aot20n25l.pdf Size:285K _aosemi

AOT20N60
AOT20N60

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

Datasheet: AOT14N50FD , AOT15S60 , AOT1606L , AOT1608L , AOT16N50 , AOT1N60 , AOT20C60 , AOT20N25 , IRFB3306 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , AOT2500L , AOT254L , AOT25S65 , AOT2606L .

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