AOT20N60 Datasheet and Replacement
Type Designator: AOT20N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 273 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: TO-220
AOT20N60 substitution
AOT20N60 Datasheet (PDF)
aot20n60.pdf

AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot20n60.pdf

isc N-Channel MOSFET Transistor AOT20N60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aot20n60l.pdf

AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot20n25.pdf

AOT20N25250V,20A N-Channel MOSFETGeneral Description Product Summary VDS300V@150The AOT20N25 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
Datasheet: AOT14N50FD , AOT15S60 , AOT1606L , AOT1608L , AOT16N50 , AOT1N60 , AOT20C60 , AOT20N25 , IRF9540 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , AOT2500L , AOT254L , AOT25S65 , AOT2606L .
Keywords - AOT20N60 MOSFET datasheet
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