AOT264L
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT264L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 333
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2
V
|Id|ⓘ - Maximum Drain Current: 140
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 78
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 840
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032
Ohm
Package:
TO-220
AOT264L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT264L
Datasheet (PDF)
..1. Size:421K aosemi
aot264l.pdf 
AOT264L/AOB264L60V N-Channel MOSFETGeneral Description Product SummaryVDS 60VThe AOT264L/AOB264L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 140Aprovide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V)
..2. Size:358K aosemi
aob264l aot264l.pdf
AOT264L/AOB264L60V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOT264L/AOB264L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 140Aprovide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
..3. Size:245K inchange semiconductor
aot264l.pdf
isc N-Channel MOSFET Transistor AOT264LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
9.1. Size:333K aosemi
aot262l.pdf
AOT262L/AOB262L60V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:367K aosemi
aot2618l.pdf
AOT2618L/AOB2618L/AOTF2618L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2618L & AOB2618L & AOTF2618L uses trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.3. Size:348K aosemi
aot2610l.pdf
AOT2610L/AOTF2610L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2610L & AOTF2610L uses trench MOSFET 60Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 55A / 35Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
9.4. Size:289K aosemi
aot2608l.pdf
AOT2608L/AOB2608L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72Atechnology that is uniquely optimized to provide the mostefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
9.5. Size:405K aosemi
aot266l.pdf
AOT266L/AOB266L/AOTF266L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT266L & AOB266L & AOTF266L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.6. Size:349K aosemi
aot2606l.pdf
AOT2606L/AOB2606L/AOTF2606L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2606L & AOB2606L & AOTF2606L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.7. Size:276K aosemi
aot260l.pdf
AOT260L/AOB260L60V N-Channel MOSFETGeneral Description Product SummaryThe AOT(B)260L uses Trench MOSFET technology that VDS60Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 140Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)
9.8. Size:244K inchange semiconductor
aot262l.pdf
isc N-Channel MOSFET Transistor AOT262LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
9.9. Size:245K inchange semiconductor
aot2618l.pdf
isc N-Channel MOSFET Transistor AOT2618LFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 19m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener
9.10. Size:261K inchange semiconductor
aot2610l.pdf
isc N-Channel MOSFET Transistor AOT2610LFEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.11. Size:245K inchange semiconductor
aot2608l.pdf
isc N-Channel MOSFET Transistor AOT2608LFEATURESDrain Current I = 72A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
9.12. Size:245K inchange semiconductor
aot266l.pdf
isc N-Channel MOSFET Transistor AOT266LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
9.13. Size:245K inchange semiconductor
aot260l.pdf
isc N-Channel MOSFET Transistor AOT260LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
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