HAT2061R Datasheet and Replacement
Type Designator: HAT2061R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 530 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TSOP8
HAT2061R substitution
HAT2061R Datasheet (PDF)
rej03g1176 hat2068rds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1175 hat2064rds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2064rj.pdf

HAT2064RJwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Datasheet: HAT2046R , HAT2049T , HAT2050T , HAT2051T , HAT2052T , HAT2053M , HAT2054M , HAT2058R , IRF630 , HAT2064R , HAT2065R , HAT2068R , HAT2070R , HAT2077R , HEPF2004 , HEPF2007A , HP4410DY .
History: FDD3706
Keywords - HAT2061R MOSFET datasheet
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History: FDD3706



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