All MOSFET. AOT2918L Datasheet

 

AOT2918L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOT2918L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 267 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
   Maximum Drain Current |Id|: 90 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 38 nC
   Rise Time (tr): 24 nS
   Drain-Source Capacitance (Cd): 1530 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
   Package: TO-220

 AOT2918L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT2918L Datasheet (PDF)

 ..1. Size:381K  aosemi
 aot2918l.pdf

AOT2918L AOT2918L

AOT2918L/AOB2918L/AOTF2918L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2918L & AOB2918L & AOTF2918L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..2. Size:245K  inchange semiconductor
 aot2918l.pdf

AOT2918L AOT2918L

isc N-Channel MOSFET Transistor AOT2918LFEATURESDrain Current I = 90A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

 8.1. Size:381K  aosemi
 aob2910l aot2910l aotf2910l.pdf

AOT2918L AOT2918L

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.2. Size:345K  aosemi
 aot2916l aotf2916l.pdf

AOT2918L AOT2918L

AOT2916L/AOTF2916L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2916L & AOTF2916L uses trench MOSFET 100Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.3. Size:245K  inchange semiconductor
 aot2910l.pdf

AOT2918L AOT2918L

isc N-Channel MOSFET Transistor AOT2910LFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 8.4. Size:265K  inchange semiconductor
 aot2916l.pdf

AOT2918L AOT2918L

isc N-Channel MOSFET Transistor AOT2916LFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =34m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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