HAT2064R Datasheet and Replacement
Type Designator: HAT2064R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 40 nC
Cossⓘ - Output Capacitance: 2200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: SOP8
HAT2064R substitution
HAT2064R Datasheet (PDF)
rej03g1175 hat2064rds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2064rj.pdf

HAT2064RJwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
rej03g1176 hat2068rds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: HAT2049T , HAT2050T , HAT2051T , HAT2052T , HAT2053M , HAT2054M , HAT2058R , HAT2061R , IRF3710 , HAT2065R , HAT2068R , HAT2070R , HAT2077R , HEPF2004 , HEPF2007A , HP4410DY , HP4936DY .
History: FDB3672F085
Keywords - HAT2064R MOSFET datasheet
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History: FDB3672F085



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