All MOSFET. AOT3N100 Datasheet

 

AOT3N100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOT3N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 132 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO-220

 AOT3N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT3N100 Datasheet (PDF)

 ..1. Size:329K  aosemi
 aot3n100.pdf

AOT3N100 AOT3N100

AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 ..2. Size:261K  inchange semiconductor
 aot3n100.pdf

AOT3N100 AOT3N100

isc N-Channel MOSFET Transistor AOT3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:184K  aosemi
 aot3n60.pdf

AOT3N100 AOT3N100

AOT3N60600V,2.5A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT3N60 have been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.5Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 9.2. Size:158K  aosemi
 aot3n50.pdf

AOT3N100 AOT3N100

AOT3N50/AOTF3N50500V, 3A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT3N50 & AOTF3N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 3Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.3. Size:261K  inchange semiconductor
 aot3n60.pdf

AOT3N100 AOT3N100

isc N-Channel MOSFET Transistor AOT3N60FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =3.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.4. Size:261K  inchange semiconductor
 aot3n50.pdf

AOT3N100 AOT3N100

isc N-Channel MOSFET Transistor AOT3N50FEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CS3N150W | FQB11P06 | 2N60L-TMS-T | SWP085R06VT

 

 
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