All MOSFET. AOT414 Datasheet

 

AOT414 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOT414
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-220

 AOT414 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT414 Datasheet (PDF)

 ..1. Size:325K  aosemi
 aot414.pdf

AOT414 AOT414

AOT414100V N-channel MOSFETGeneral Description Product SummaryVDS100VThe AOT414 is fabricated with SDMOSTM trench ID (at VGS=10V) 43Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 ..2. Size:244K  inchange semiconductor
 aot414.pdf

AOT414 AOT414

isc N-Channel MOSFET Transistor AOT414FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

 9.1. Size:313K  aosemi
 aot412.pdf

AOT414 AOT414

AOT412/AOB412L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT412 & AOB412L are fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60Alow gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

 9.2. Size:199K  aosemi
 aot416.pdf

AOT414 AOT414

AOT416100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOT416 is fabricated with SDMOSTM trench ID (at VGS=10V) 42Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.3. Size:313K  aosemi
 aot412 aob412l.pdf

AOT414 AOT414

AOT412/AOB412L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT412 & AOB412L are fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60Alow gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

 9.4. Size:344K  aosemi
 aot410l.pdf

AOT414 AOT414

AOT410L/AOB410L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT410L/AOB410L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150Agate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.5. Size:296K  aosemi
 aot418l.pdf

AOT414 AOT414

AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

 9.6. Size:238K  inchange semiconductor
 aot412.pdf

AOT414 AOT414

isc N-Channel MOSFET Transistor AOT412FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 15.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.7. Size:245K  inchange semiconductor
 aot416.pdf

AOT414 AOT414

isc N-Channel MOSFET Transistor AOT416FEATURESDrain Current I = 42A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

 9.8. Size:244K  inchange semiconductor
 aot410l.pdf

AOT414 AOT414

isc N-Channel MOSFET Transistor AOT410LFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 9.9. Size:245K  inchange semiconductor
 aot418l.pdf

AOT414 AOT414

isc N-Channel MOSFET Transistor AOT418LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOTF15S60

 

 
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