AOTF10N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOTF10N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 105 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 0.98 Ohm
Package: TO-220F
AOTF10N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOTF10N90 Datasheet (PDF)
1.1. aotf10n90.pdf 
Size:296K _aosemi
AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 0.98Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed
3.1. aotf10n65.pdf Size:203K _aosemi
AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along
3.2. aotf10n60.pdf Size:375K _aosemi
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.75Ω performance and robustness in popular AC-DC applications.By providing low RDS(on
3.3. aotf10n50fd.pdf Size:330K _aosemi
AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150℃ The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.75Ω popular AC-DC applications. By providing low RDS(on), Ciss an
Datasheet: AOT8N65 , AOT8N80 , AOT9N40 , AOT9N50 , AOT9N70 , AOTF10N50FD , AOTF10N60 , AOTF10N65 , 2SK1058 , AOTF10T60 , AOTF10T60P , AOTF11C60 , AOTF11N60 , AOTF11N62 , AOTF11N70 , AOTF11S60 , AOTF11S65 .
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