AOTF10T60P PDF and Equivalents Search

AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max ... See More ⇒

AOT10T60/AOTF10T60 600V,10A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V The AOT10T60 & AOTF10T60 are fabricated using an advanced high voltage MOSFET process that is designed IDM 40A to deliver high levels of performance and robustness in RDS(ON),max ... See More ⇒

AOTF10B60D2 TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TJ=25 C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance... See More ⇒

AOTF10B65M1 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie... See More ⇒

AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) ... See More ⇒

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

AOTF10B65M2 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies... See More ⇒

AOTF10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒

AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150 The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) ... See More ⇒

AOTF10B65MQ2 TM 650V, 10A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc... See More ⇒

isc N-Channel MOSFET Transistor AOTF10N90 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =0.98 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

isc N-Channel MOSFET Transistor AOTF10N65 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

isc N-Channel MOSFET Transistor AOTF10N60 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

isc N-Channel MOSFET Transistor AOTF10N50FD FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒