AOTF2918L MOSFET Datasheet: N-Ch, 100V, 58A. Full specification with pinout and replacement list

AOTF2918L Specs and Replacement

Type Designator: AOTF2918L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 1530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO-220F

AOTF2918L substitution

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AOTF2918L datasheet

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AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒

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isc N-Channel MOSFET Transistor AOTF2918L FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒

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AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒

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