AOTF2N60 Specs and Replacement
Type Designator: AOTF2N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.3 nS
Cossⓘ - Output Capacitance: 29 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO-220F
AOTF2N60 substitution
- MOSFET ⓘ Cross-Reference Search
AOTF2N60 datasheet
aotf2n60.pdf
AOT2N60/AOTF2N60 600V,2A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 2A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf2144l.pdf
AOTF2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aot29s50l aob29s50l aotf29s50l aotf29s50.pdf
AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl... See More ⇒
aotf2146l.pdf
AOTF2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aotf20b65ln2.pdf
AOTF20B65LN2 TM 650V, 20A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 20A C) Very low VCE(sat) VCE(sat) (TJ=25 1.54V C) Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Low Turn-Of... See More ⇒
aob2910l aot2910l aotf2910l.pdf
AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aotf20n40.pdf
AOTF20N40 400V,20A N-Channel MOSFET General Description Product Summary VDS 500@150 The AOTF20N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
aot2618l aob2618l aotf2618l.pdf
AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aotf2910l.pdf
AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aotf298l.pdf
AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description Product Summary VDS The AOT298L & AOB298L & AOTF298L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aot2910l aob2910l aotf2910l.pdf
AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aotf2144l.pdf
AOTF2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aot20s60 aob20s60 aotf20s60.pdf
AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin... See More ⇒
aotf20s60l.pdf
AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin... See More ⇒
aotf240l.pdf
AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description Product Summary VDS The AOT240L & AOB240L & AOTF240L uses Trench 40V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aot29s50l aob29s50l aotf29s50l aotf29s50.pdf
AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl... See More ⇒
aotf20s60.pdf
AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin... See More ⇒
aotf20n60.pdf
AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aot2606l aob2606l aotf2606l.pdf
AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aotf22n50.pdf
AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aot20n60 aotf20n60.pdf
AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf2916l.pdf
AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2916L & AOTF2916L uses trench MOSFET 100V technology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) ... See More ⇒
aotf2142l.pdf
AOT2142L/AOTF2142L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A / 112A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aot27s60 aob27s60 aotf27s60.pdf
AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin... See More ⇒
aotf20c60p.pdf
AOTF20C60P 600V,20A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf29s50.pdf
AOT29S50/AOB29S50/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced MOSTM high voltage IDM 120A process that is designed to deliver high levels of RDS(ON),max 0.15 performance and robustness in switching applications. Qg,typ 26.6nC By provi... See More ⇒
aotf2918l.pdf
AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aotf288l.pdf
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aot266l aob266l aotf266l.pdf
AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to ID (at VGS=10V) 140A/78A provide the most efficient high frequency switching RDS(ON) (at VGS=10V) ... See More ⇒
aotf20b65m2.pdf
AOTF20B65M2 TM 650V, 20A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 20A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie... See More ⇒
aotf27s60.pdf
AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin... See More ⇒
aotf20n40 aotf20n40l.pdf
AOTF20N40/AOTF20N40L 400V,20A N-Channel MOSFET General Description Product Summary VDS 500@150 The AOTF20N40 & AOTF20N40L is fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf20c60.pdf
AOT20C60/AOB20C60/AOTF20C60 600V,20A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max ... See More ⇒
aot27s60l aob27s60l aotf27s60l aotf27s60.pdf
AOT27S60L/AOB27S60L/AOTF27S60L/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60L & AOB27S60L & AOTF27S60L & AOTF27S60 have been fabricated using the advanced IDM 110A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.16 levels of performance and robustness in switching Qg,typ 26nC applic... See More ⇒
aot240l aob240l aotf240l.pdf
AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description Product Summary VDS The AOT240L & AOB240L & AOTF240L uses Trench 40V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aot2142l aotf2142l.pdf
AOT2142L/AOTF2142L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A / 112A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aot292l aob292l aotf292l.pdf
AOT292L/AOB292L/AOTF292L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V) ... See More ⇒
aotf280a60l aot280a60l aob280a60l.pdf
AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aot20s60l aob20s60l aotf20s60l aotf20s60.pdf
AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced MOSTM IDM 80A high voltage process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ ... See More ⇒
aotf286l.pdf
AOTF286L 80V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 80V Low RDS(ON) ID (at VGS=10V) 56A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aotf266l.pdf
AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aot288l aob288l aotf288l.pdf
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aotf25s65.pdf
AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi... See More ⇒
aotf260l.pdf
AOTF260L 60V N-Channel MOSFET General Description Product Summary VDS The AOTF260L uses Trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 92A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒
aotf280a60l.pdf
AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf292l.pdf
AOT292L/AOB292L/AOTF292L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V) ... See More ⇒
aotf290l.pdf
AOTF290L 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 72A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aotf2618l.pdf
AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aot25s65 aob25s65 aotf25s65.pdf
AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi... See More ⇒
aot22n50 aotf22n50.pdf
AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf20b65m1.pdf
AOTF20B65M1 TM 650V, 20A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 20A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie... See More ⇒
aotf256l.pdf
AOTF256L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOTF256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒
aotf2606l.pdf
AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒
aotf296l.pdf
AOTF296L 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 41A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aotf25s65l.pdf
isc N-Channel MOSFET Transistor AOTF25S65L FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒
aotf2146l.pdf
isc N-Channel MOSFET Transistor AOTF2146L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf20n40.pdf
isc N-Channel MOSFET Transistor AOTF20N40 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
aotf2910l.pdf
isc N-Channel MOSFET Transistor AOTF2910L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen... See More ⇒
aotf298l.pdf
isc N-Channel MOSFET Transistor AOTF298L FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 14.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge... See More ⇒
aotf2144l.pdf
isc N-Channel MOSFET Transistor AOTF2144L FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf20s60l.pdf
isc N-Channel MOSFET Transistor AOTF20S60L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf240l.pdf
isc N-Channel MOSFET Transistor AOTF240L FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
aotf20s60.pdf
isc N-Channel MOSFET Transistor AOTF20S60 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
aotf20n60.pdf
isc N-Channel MOSFET Transistor AOTF20N60 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
aotf22n50.pdf
isc N-Channel MOSFET Transistor AOTF22N50 FEATURES Drain Current I = 22A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf2916l.pdf
isc N-Channel MOSFET Transistor AOTF2916L FEATURES Drain-source on-resistance RDS(on) 34m @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V... See More ⇒
aotf2142l.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOTF2142L FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses Optimized for fast-switching applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch... See More ⇒
aotf20c60p.pdf
isc N-Channel MOSFET Transistor AOTF20C60P FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION General Lighting for LED and CCFL AC/DC Power supplies for Ind... See More ⇒
aotf29s50.pdf
isc N-Channel MOSFET Transistor AOTF29S50 FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf2918l.pdf
isc N-Channel MOSFET Transistor AOTF2918L FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
aotf288l.pdf
isc N-Channel MOSFET Transistor AOTF288L FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 9.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
aotf27s60.pdf
isc N-Channel MOSFET Transistor AOTF27S60 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge... See More ⇒
aotf286l.pdf
isc N-Channel MOSFET Transistor AOTF286L FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
aotf266l.pdf
isc N-Channel MOSFET Transistor AOTF266L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen... See More ⇒
aotf25s65.pdf
isc N-Channel MOSFET Transistor AOTF25S65 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf260l.pdf
isc N-Channel MOSFET Transistor AOTF260L FEATURES Drain Current I = 92A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
aotf292l.pdf
isc N-Channel MOSFET Transistor AOT292L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
aotf290l.pdf
isc N-Channel MOSFET Transistor AOTF290L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen... See More ⇒
aotf29s50l.pdf
isc N-Channel MOSFET Transistor AOTF29S50L FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒
aotf2618l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF2618L FEATURES With TO-220F packaging High speed switching Easy to use The most efficient high frequency switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applicat... See More ⇒
aotf2210l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF2210L FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate... See More ⇒
aotf262l.pdf
isc N-Channel MOSFET Transistor AOTF262L FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
aotf256l.pdf
isc N-Channel MOSFET Transistor AOTF256L FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
aotf2606l.pdf
sc N-Channel MOSFET Transistor AOTF2606L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATIN... See More ⇒
aotf296l.pdf
isc N-Channel MOSFET Transistor AOTF296L FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
Detailed specifications: AOTF262L, AOTF266L, AOTF27S60, AOTF288L, AOTF2910L, AOTF2916L, AOTF2918L, AOTF29S50, K4145, AOTF3N100, AOTF3N50, AOTF3N80, AOTF3N90, AOTF404, AOTF409, AOTF4126, AOTF4185
Keywords - AOTF2N60 MOSFET specs
AOTF2N60 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: ME55N06A | AP0903GYT | SUM110P04-05 | MDF4N60DTH | SUM110N06-3M4L | TD381BA
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