All MOSFET. AOTF4N90 Datasheet

 

AOTF4N90 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTF4N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.4 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
   Package: TO-220F

 AOTF4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF4N90 Datasheet (PDF)

 ..1. Size:185K  aosemi
 aotf4n90.pdf

AOTF4N90 AOTF4N90

AOTF4N90900V,4A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF4N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:252K  inchange semiconductor
 aotf4n90.pdf

AOTF4N90 AOTF4N90

isc N-Channel MOSFET Transistor AOTF4N90FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =3.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 8.1. Size:651K  aosemi
 aot4n60 aotf4n60 aotf4n60l.pdf

AOTF4N90 AOTF4N90

AOT4N60/AOTF4N60/AOTF4N60L600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 & AOTF4N60L have beenfabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4Athat is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.2. Size:252K  aosemi
 aotf4n60.pdf

AOTF4N90 AOTF4N90

AOT4N60/AOTF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.3. Size:202K  inchange semiconductor
 aotf4n60.pdf

AOTF4N90 AOTF4N90

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF4N60FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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