AOTF7N70 Datasheet and Replacement
Type Designator: AOTF7N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-220F
AOTF7N70 substitution
AOTF7N70 Datasheet (PDF)
aotf7n70.pdf

AOT7N70/AOTF7N70700V, 7A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT7N70 & AOTF7N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aotf7n70.pdf

isc N-Channel MOSFET Transistor AOTF7N70FEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aotf7n60.pdf

AOT7N60/AOTF7N60600V,7A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT7N60 & AOTF7N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aotf7n60fd.pdf

AOTF7N60FD600V, 7A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS700V@150The AOTF7N60FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 7Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
Datasheet: AOTF4T60P , AOTF5N100 , AOTF5N50 , AOTF5N50FD , AOTF6N90 , AOTF7N60 , AOTF7N60FD , AOTF7N65 , 75N75 , AOTF7S65 , AOTF7T60 , AOTF7T60P , AOTF8N50 , AOTF8N60 , AOTF8N65 , AOTF8N80 , AOTF8T50P .
Keywords - AOTF7N70 MOSFET datasheet
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