AOTF7T60 Specs and Replacement
Type Designator: AOTF7T60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ -
Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO-220F
- MOSFET ⓘ Cross-Reference Search
AOTF7T60 datasheet
..1. Size:231K aosemi
aotf7t60.pdf 
AOTF7T60 600V,7A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 28A Low Ciss and Crss RDS(ON),max ... See More ⇒
0.1. Size:234K aosemi
aotf7t60p.pdf
AOTF7T60P 600V,7A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 28A Low Ciss and Crss RDS(ON),max ... See More ⇒
9.1. Size:540K aosemi
aotf7n70.pdf
AOT7N70/AOTF7N70 700V, 7A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT7N70 & AOTF7N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.2. Size:302K aosemi
aotf7s65.pdf
AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low ... See More ⇒
9.3. Size:498K aosemi
aotf7n60.pdf
AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.4. Size:646K aosemi
aotf7s60.pdf
AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low RD... See More ⇒
9.5. Size:287K aosemi
aotf7s60-l.pdf
AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R... See More ⇒
9.6. Size:339K aosemi
aotf7n60fd.pdf
AOTF7N60FD 600V, 7A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 700V@150 The AOTF7N60FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 7A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) ... See More ⇒
9.7. Size:506K aosemi
aot7n65 aotf7n65.pdf
AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.8. Size:408K aosemi
aotf7n65.pdf
AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.9. Size:504K aosemi
aotf780a70l.pdf
AOTF780A70L/AOT780A70L/AOB780A70L TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
9.10. Size:288K aosemi
aot7s60 aob7s60 aotf7s60.pdf
AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R... See More ⇒
9.11. Size:488K aosemi
aot7n60 aotf7n60.pdf
AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.12. Size:376K aosemi
aot7n70 aotf7n70.pdf
AOT7N70/AOTF7N70 700V, 7A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT7N70 & AOTF7N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.13. Size:303K aosemi
aot7s65 aob7s65 aotf7s65.pdf
AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low ... See More ⇒
9.14. Size:504K aosemi
aotf780a70l aot780a70l aob780a70l.pdf
AOTF780A70L/AOT780A70L/AOB780A70L TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
9.15. Size:244K inchange semiconductor
aotf7n70.pdf
isc N-Channel MOSFET Transistor AOTF7N70 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
9.16. Size:252K inchange semiconductor
aotf7s65.pdf
isc N-Channel MOSFET Transistor AOTF7S65 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
9.17. Size:252K inchange semiconductor
aotf7n60.pdf
isc N-Channel MOSFET Transistor AOTF7N60 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
9.18. Size:252K inchange semiconductor
aotf7s60.pdf
isc N-Channel MOSFET Transistor AOTF7S60 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
9.19. Size:252K inchange semiconductor
aotf7n60fd.pdf
isc N-Channel MOSFET Transistor AOTF7N60FD FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.45 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
9.20. Size:252K inchange semiconductor
aotf7n65.pdf
isc N-Channel MOSFET Transistor AOTF7N65 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =1.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
Detailed specifications: AOTF5N50, AOTF5N50FD, AOTF6N90, AOTF7N60, AOTF7N60FD, AOTF7N65, AOTF7N70, AOTF7S65, IRF520, AOTF7T60P, AOTF8N50, AOTF8N60, AOTF8N65, AOTF8N80, AOTF8T50P, AOTF9N50, AOTF9N70
Keywords - AOTF7T60 MOSFET specs
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