AOTF8N65 MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

AOTF8N65 Specs and Replacement

Type Designator: AOTF8N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 101 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm

Package: TO-220F

AOTF8N65 substitution

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AOTF8N65 datasheet

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AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

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..3. Size:252K inchange semiconductor
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isc N-Channel MOSFET Transistor AOTF8N65 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

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AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒