All MOSFET. AOW20C60 Datasheet

 

AOW20C60 Datasheet and Replacement


   Type Designator: AOW20C60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 463 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO-262
 

 AOW20C60 substitution

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AOW20C60 Datasheet (PDF)

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AOW20C60

AOW20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOW20C60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high IDM 145Alevels of performance and robustness in popular AC-DC RDS(ON),max

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AOW20C60

AOW20S60/AOWF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW20S60 & AOWF20S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 80Adesigned to deliver high levels of performance and RDS(ON),max 0.199robustness in switching applications. Qg,typ 20nCBy providing low RDS(on), Qg a

 9.2. Size:300K  inchange semiconductor
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AOW20C60

isc N-Channel MOSFET Transistor AOW20S60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: AOW11S60 , AOW11S65 , AOW12N50 , AOW12N60 , AOW12N65 , AOW14N50 , AOW15S60 , AOW15S65 , IRF840 , AOW20S60 , AOW2500 , AOW25S65 , AOW284 , AOW2918 , AOW298 , AOW29S50 , AOW410 .

Keywords - AOW20C60 MOSFET datasheet

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