AOW20C60 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOW20C60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 463 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 52 nC
trⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 145 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO-262
AOW20C60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOW20C60 Datasheet (PDF)
aow20c60.pdf
AOW20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOW20C60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high IDM 145Alevels of performance and robustness in popular AC-DC RDS(ON),max
aow20s60.pdf
AOW20S60/AOWF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW20S60 & AOWF20S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 80Adesigned to deliver high levels of performance and RDS(ON),max 0.199robustness in switching applications. Qg,typ 20nCBy providing low RDS(on), Qg a
aow20s60.pdf
isc N-Channel MOSFET Transistor AOW20S60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: BF1207 | NDF08N60Z
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