AOWF10N65 Datasheet and Replacement
Type Designator: AOWF10N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 118 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-262F
AOWF10N65 substitution
AOWF10N65 Datasheet (PDF)
aowf10n65.pdf

AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
aow10n60 aowf10n60.pdf

AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aowf10n60.pdf

AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aowf10t60p.pdf

AOW10T60P/AOWF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max
Datasheet: AOW410 , AOW418 , AOW480 , AOW482 , AOW4S60 , AOW7S60 , AOW7S65 , AOWF10N60 , IRFB4227 , AOWF10T60P , AOWF11C60 , AOWF11N60 , AOWF11N70 , AOWF11S60 , AOWF11S65 , AOWF12N50 , AOWF12N60 .
History: IRF7739L1 | DMP3020LSS
Keywords - AOWF10N65 MOSFET datasheet
AOWF10N65 cross reference
AOWF10N65 equivalent finder
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History: IRF7739L1 | DMP3020LSS



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