AOWF11S60 PDF and Equivalents Search

 

AOWF11S60 Specs and Replacement

Type Designator: AOWF11S60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 37.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm

Package: TO-262F

AOWF11S60 substitution

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AOWF11S60 datasheet

 ..1. Size:277K  aosemi
 aowf11s60.pdf pdf_icon

AOWF11S60

AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg a... See More ⇒

 ..2. Size:277K  aosemi
 aow11s60 aowf11s60.pdf pdf_icon

AOWF11S60

AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg a... See More ⇒

 6.1. Size:259K  aosemi
 aowf11s65.pdf pdf_icon

AOWF11S60

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg... See More ⇒

 6.2. Size:259K  aosemi
 aow11s65 aowf11s65.pdf pdf_icon

AOWF11S60

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg... See More ⇒

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Detailed specifications: AOW7S60, AOW7S65, AOWF10N60, AOWF10N65, AOWF10T60P, AOWF11C60, AOWF11N60, AOWF11N70, 8205A, AOWF11S65, AOWF12N50, AOWF12N60, AOWF12N65, AOWF12T60P, AOWF14N50, AOWF15S60, AOWF15S65

Keywords - AOWF11S60 MOSFET specs

 AOWF11S60 cross reference

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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