AOWF2606 MOSFET Datasheet: N-Ch, 60V, 51A. Full specification with pinout and replacement list

AOWF2606 Specs and Replacement

Type Designator: AOWF2606

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-262F

AOWF2606 substitution

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AOWF2606 datasheet

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AOWF2606 60V N-Channel MOSFET General Description Product Summary VDS The AOWF2606 uses Trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 51A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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AOW25S65/AOWF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW25S65 & AOWF25S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 104A designed to deliver high levels of performance and RDS(ON),max 0.19 robustness in switching applications. Qg,typ 26.4nC By providing low RDS(on), Qg... See More ⇒