AOWF2606 Datasheet and Replacement

AOWF260660V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOWF2606 uses Trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 51Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

AOW296/AOWF296TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

AOW20S60/AOWF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW20S60 & AOWF20S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 80Adesigned to deliver high levels of performance and RDS(ON),max 0.199robustness in switching applications. Qg,typ 20nCBy providing low RDS(on), Qg a

AOWF24040V N-Channel MOSFETGeneral Description Product SummaryThe AOWF240 uses Trench MOSFET technology that isVDS40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 83Afrequency switching performance. Power losses are

AOW25S65/AOWF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW25S65 & AOWF25S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 104Adesigned to deliver high levels of performance and RDS(ON),max 0.19robustness in switching applications. Qg,typ 26.4nCBy providing low RDS(on), Qg