AOY516 Datasheet and Replacement
Type Designator: AOY516
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 512 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-251B
AOY516 substitution
AOY516 Datasheet (PDF)
aoy516.pdf

AOD516/AOI516/AOY51630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
aod516 aoi516 aoy516.pdf

AOD516/AOI516/AOY51630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
aoy516.pdf

isc N-Channel MOSFET Transistor AOY516FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aoy514.pdf

AOD514/AOI514/AOY51430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOWF4N60 , AOWF4S60 , AOWF7S65 , AOWF8N50 , AOWF9N70 , AOY2N60 , AOY423 , AOY514 , 4N60 , AOY526 , AOY528 , 2SJ154 , 2SK1101-01MR , 2SK3515-01MR , 2SK436 , 2SK850 , 2SK3918 .
History: TJ11A10M3 | STFI11N65M2 | RFD8P06ESM | STD55N4F5 | UPA1916 | HY5208W | IPD60R520C6
Keywords - AOY516 MOSFET datasheet
AOY516 cross reference
AOY516 equivalent finder
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History: TJ11A10M3 | STFI11N65M2 | RFD8P06ESM | STD55N4F5 | UPA1916 | HY5208W | IPD60R520C6



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