2SK3918-ZK Specs and Replacement
Type Designator: 2SK3918-ZK
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ -
Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO252
MP3ZK
- MOSFET ⓘ Cross-Reference Search
2SK3918-ZK datasheet
..1. Size:287K inchange semiconductor
2sk3918-zk.pdf 
isc N-Channel MOSFET Transistor 2SK3918-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
7.1. Size:160K nec
2sk3918.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 (MP-3ZK) applications such as DC/DC co... See More ⇒
7.2. Size:355K inchange semiconductor
2sk3918.pdf 
isc N-Channel MOSFET Transistor 2SK3918 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.1. Size:167K 1
2sk3919 2sk3919-zk.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3919 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3919-ZK TO-252 (MP-3ZK) applications such as DC/DC co... See More ⇒
8.2. Size:193K toshiba
2sk3911.pdf 
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Low drain-source ON resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 500 A (VDS = 600 V) Enhancement model Vth = 2... See More ⇒
8.3. Size:207K fuji
2sk3915-01mr.pdf 
2SK3915-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
8.4. Size:121K fuji
2sk3917-01mr.pdf 
2SK3917-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
8.5. Size:206K fuji
2sk3916-01.pdf 
2SK3916-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
8.6. Size:205K fuji
2sk3914-01.pdf 
2SK3914-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
8.7. Size:190K fuji
2sk3913-01mr.pdf 
2SK3913-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching Low on-resistance TO-220F No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
8.8. Size:97K tysemi
2sk3919.pdf 
SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC Product specification 2SK3919 TO-252 Unit mm +0.1 6.50+0.15 2.30-0.1 -0.15 +0.8 5.30+0.2 0.50-0.7 -0.2 Features Low on-state resistance RDS(on)1 =5.6 m MAX. (VGS =10 V, ID =32 A) 0.127 Low Ciss Ciss = 2050 pF TYP. 0.80+0.1 max -0.1 5 V drive available 2.3 0.60+0.1 1Gate -0.1 +0.15 4.60-0.15 2Drain 3Source ... See More ⇒
8.9. Size:280K inchange semiconductor
2sk3915-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3915-01MR FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.10. Size:286K inchange semiconductor
2sk3911.pdf 
isc N-Channel MOSFET Transistor 2SK3911 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.32 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
8.11. Size:280K inchange semiconductor
2sk3917-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3917-01MR FEATURES Drain Current I = 4.3A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.12. Size:289K inchange semiconductor
2sk3916-01.pdf 
isc N-Channel MOSFET Transistor 2SK3916-01 FEATURES Drain Current I = 4.3A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.13. Size:354K inchange semiconductor
2sk3919.pdf 
isc N-Channel MOSFET Transistor 2SK3919 FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.14. Size:286K inchange semiconductor
2sk3919-zk.pdf 
isc N-Channel MOSFET Transistor 2SK3919-ZK FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.15. Size:289K inchange semiconductor
2sk3914-01.pdf 
isc N-Channel MOSFET Transistor 2SK3914-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.16. Size:280K inchange semiconductor
2sk3913-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3913-01MR FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
Detailed specifications: AOY526, AOY528, 2SJ154, 2SK1101-01MR, 2SK3515-01MR, 2SK436, 2SK850, 2SK3918, STP80NF70, 2SK2651-01MR, 2SK2638-01MR, 2SK1916-01R, 2SK1772, 2SK1070, 2SJ450, APT1001RBLC, APT1001RBVFR
Keywords - 2SK3918-ZK MOSFET specs
2SK3918-ZK cross reference
2SK3918-ZK equivalent finder
2SK3918-ZK pdf lookup
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