All MOSFET. 2SK2651-01MR Datasheet

 

2SK2651-01MR MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2651-01MR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 1.87 Ohm

Package: TO220F15

2SK2651-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2651-01MR Datasheet (PDF)

1.1. 2sk2651-01mr.pdf Size:327K _fuji

2SK2651-01MR
2SK2651-01MR

N-channel MOS-FET 2SK2651-01MR FAP-IIS Series 900V 2,5Ω 6A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteris

4.1. 2sk2653-01r.pdf Size:304K _update

2SK2651-01MR
2SK2651-01MR

N-channel MOS-FET 2SK2653-01R FAP-IIS Series 900V 2,5Ω 6A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characterist

4.2. 2sk2652-01.pdf Size:312K _update

2SK2651-01MR
2SK2651-01MR

N-channel MOS-FET 2SK2652-01 FAP-IIS Series 900V 2,5Ω 6A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characterist

 4.3. 2sk2659.pdf Size:30K _panasonic

2SK2651-01MR
2SK2651-01MR

Power F-MOS FETs 2SK2659 2SK2659 Silicon N-Channel Power F-MOS Unit : mm 5.0 0.1 Features 10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching 90? Low ON-resistance No secondary breakdown 1.2 0.1 C1.0 2.25 0.2 Low-voltage drive 0.65 0.1 0.35 0.1 1.05 0.1 Radial taping possible 0.55 0.1 0.55 0.1 Applications Non-contact relay Note) Lead line

4.4. 2sk2655-01r.pdf Size:291K _fuji

2SK2651-01MR
2SK2651-01MR

N-channel MOS-FET 2SK2655-01R FAP-IIS Series 900V 2? 8A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics >

 4.5. 2sk2654-01.pdf Size:267K _fuji

2SK2651-01MR
2SK2651-01MR

N-channel MOS-FET 2SK2654-01 FAP-IIS Series 900V 2Ω 8A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics >

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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