2SK2638-01MR Datasheet and Replacement
Type Designator: 2SK2638-01MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 101 nC
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO220F
2SK2638-01MR substitution
2SK2638-01MR Datasheet (PDF)
2sk2638-01mr.pdf
FUJI POWER MOSFET2SK2638-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic
2sk2632ls.pdf
Ordering number:ENN5531BN-Channel Silicon MOSFET2SK2632LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Low Qg.2078B[2SK2632LS]4.510.02.83.20.91.21.20.70.751 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO220FI-LSSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditio
2sk2631.pdf
Ordering number : ENN66002SK2631N-Channel Silicon MOSFET2SK2631Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance. unit : mm Smaller amount of total gate charge. 2083B[2SK2631]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK2631]6.5 2.35.0 0
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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