All MOSFET. APT1001RBLC Datasheet

 

APT1001RBLC MOSFET. Datasheet pdf. Equivalent

Type Designator: APT1001RBLC

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 280 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO247

APT1001RBLC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

APT1001RBLC Datasheet (PDF)

1.1. apt1001rbvfr.pdf Size:118K _apt

APT1001RBLC
APT1001RBLC

APT1001RBVFR APT1001RSVFR Ω 1000V 11A 1.00Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® SVFR also achieves faster switching speeds through optimized gate layou

1.2. apt1001rbn.pdf Size:51K _apt

APT1001RBLC
APT1001RBLC

D TO-247 G APT1001RBN 1000V 11.0A 1.00Ω S APT5030BN 500V 21.0A 0.30Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 1001RBN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 11 Amps IDM Pulsed Drain Current 1 44 VGS Gate-Source Vo

 1.3. apt1001rblc.pdf Size:34K _apt

APT1001RBLC
APT1001RBLC

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw

1.4. apt1001rbvr.pdf Size:68K _apt

APT1001RBLC
APT1001RBLC

APT1001RBVR 1000V 11A 1.000Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lowe

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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