All MOSFET. APT10021JFLL Datasheet

 

APT10021JFLL MOSFET. Datasheet pdf. Equivalent

Type Designator: APT10021JFLL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 690 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 37 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 395 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 1650 pF

Maximum Drain-Source On-State Resistance (Rds): 0.21 Ohm

Package: SOT227

APT10021JFLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

APT10021JFLL Datasheet (PDF)

1.1. apt10021jfll.pdf Size:71K _apt

APT10021JFLL
APT10021JFLL

APT10021JFLL 1000V 37A 0.210W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

1.2. apt10021jll.pdf Size:69K _apt

APT10021JFLL
APT10021JFLL

APT10021JLL 1000V 37A 0.210W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 3.1. apt1002r4bn.pdf Size:50K _apt

APT10021JFLL
APT10021JFLL

D TO-247 G APT1002RBN 1000V 7.0A 2.00Ω S APT1002R4BN 1000V 6.5A 2.40Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 1002RBN 1002R4BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25°C 7.0 6.5 Amps IDM Pulsed Drain Current 1

3.2. apt10025jlc.pdf Size:34K _apt

APT10021JFLL
APT10021JFLL

APT10025JLC 1000V 34A 0.250W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

 3.3. apt10025jvr.pdf Size:71K _apt

APT10021JFLL
APT10021JFLL

APT10025JVR 1000V 34A 0.250Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

3.4. apt10025pvr.pdf Size:35K _apt

APT10021JFLL
APT10021JFLL

APT10025PVR 1000V 33A 0.250Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

 3.5. apt1002rcn.pdf Size:49K _apt

APT10021JFLL
APT10021JFLL

D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT1002RCN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 5.5 Amps IDM Pulsed Drain Current 1 22 VGS Gate-Source Voltage ±30 Volts Total Powe

3.6. apt10026jll.pdf Size:69K _apt

APT10021JFLL
APT10021JFLL

APT10026JLL 1000V 30A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

3.7. apt10026l2fl.pdf Size:65K _apt

APT10021JFLL
APT10021JFLL

APT10026L2FLL 1000V 38A 0.260W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speed

3.8. apt10025jvfr.pdf Size:73K _apt

APT10021JFLL
APT10021JFLL

APT10025JVFR 1000V 34A 0.250Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

3.9. apt10026l2fll.pdf Size:65K _apt

APT10021JFLL
APT10021JFLL

APT10026L2FLL 1000V 38A 0.260W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speed

3.10. apt10026jfll.pdf Size:71K _apt

APT10021JFLL
APT10021JFLL

APT10026JFLL 1000V 30A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

3.11. apt10026jn.pdf Size:63K _apt

APT10021JFLL
APT10021JFLL

D G APT10026JN 1000V 33A 0.26Ω S "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 10026JN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 33 Amps IDM, lLM Pulse

3.12. apt10026l2ll.pdf Size:64K _apt

APT10021JFLL
APT10021JFLL

APT10026L2LL 1000V 38A 0.260W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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