APT10026L2FLL
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT10026L2FLL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 890
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 38
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 294
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 1270
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26
Ohm
Package: TO264MAX
APT10026L2FLL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT10026L2FLL
Datasheet (PDF)
..1. Size:65K apt
apt10026l2fll.pdf
APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed
0.1. Size:102K apt
apt10026l2fllg.pdf
APT10026L2FLL1000V 38A 0.260R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally
2.1. Size:65K apt
apt10026l2fl.pdf
APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed
4.1. Size:64K apt
apt10026l2ll.pdf
APT10026L2LL1000V 38A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent
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