All MOSFET. APT1003RBLL Datasheet

 

APT1003RBLL MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT1003RBLL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO247

 APT1003RBLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT1003RBLL Datasheet (PDF)

 ..1. Size:99K  apt
apt1003rbll.pdf

APT1003RBLL
APT1003RBLL

APT1003RBLLAPT1003RSLL1000V 4A 3.00R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exc

 0.1. Size:99K  apt
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APT1003RBLL
APT1003RBLL

APT1003RBLLAPT1003RSLL1000V 4A 3.00R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exc

 5.1. Size:100K  apt
apt1003rbfllg apt1003rsfllg.pdf

APT1003RBLL
APT1003RBLL

APT1003RBFLLAPT1003RSFLL1000V 4A 3.00R POWER MOS 7 FREDFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

 6.1. Size:94K  apt
apt1003rkfllg.pdf

APT1003RBLL
APT1003RBLL

APT1003RKFLL1000V 4A 3.00R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptionall

 6.2. Size:92K  apt
apt1003rkll.pdf

APT1003RBLL
APT1003RBLL

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally

 6.3. Size:89K  apt
apt1003rkllg.pdf

APT1003RBLL
APT1003RBLL

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CTD04N5P5 | WMM040N08HGS

 

 
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