All MOSFET. APT10050JLC Datasheet

 

APT10050JLC Datasheet and Replacement


   Type Designator: APT10050JLC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT227
 

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APT10050JLC Datasheet (PDF)

 ..1. Size:39K  apt
apt10050jlc.pdf pdf_icon

APT10050JLC

APT10050JLC1000V 19A 0.500TMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast s

 5.1. Size:60K  apt
apt10050jn.pdf pdf_icon

APT10050JLC

DGAPT10050JN 1000V 20.5A 0.50SISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 10050JN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C20.5AmpsIDM, lLM

 5.2. Size:71K  apt
apt10050jvfr.pdf pdf_icon

APT10050JLC

APT10050JVFR1000V 19A 0.500POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 5.3. Size:68K  apt
apt10050jvr.pdf pdf_icon

APT10050JLC

APT10050JVR1000V 19A 0.500POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

Datasheet: APT10040B2VR , APT10045B2FLL , APT10045B2LL , APT10045JFLL , APT10045JLL , APT1004R2KN , APT10050B2LC , APT10050B2VFR , HY1906P , BUZ50C , APT10078BFLL , APT10078SFLL , APT10078BLL , APT10078SLL , APT10086BLC , APT10086SLC , APT10090BFLL .

History: 2SK2148-01R

Keywords - APT10050JLC MOSFET datasheet

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