APT10086BLC Specs and Replacement
Type Designator: APT10086BLC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 370 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.86 Ohm
Package: TO247
APT10086BLC substitution
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APT10086BLC datasheet
apt10086blc.pdf
APT10086BLC APT10086SLC 1000V 13A 0.860W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw... See More ⇒
apt10086bvfr.pdf
APT10086BVFR 1000V 13A 0.860 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te... See More ⇒
apt10086bvr.pdf
APT10086BVR 1000V 13A 0.860 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower... See More ⇒
apt10086svr.pdf
APT10086SVR 1000V 13A 0.860 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower... See More ⇒
Detailed specifications: APT10050B2LC, APT10050B2VFR, APT10050JLC, BUZ50C, APT10078BFLL, APT10078SFLL, APT10078BLL, APT10078SLL, IRFZ44N, APT10086SLC, APT10090BFLL, APT10090SFLL, APT10090BLL, APT10090SLL, APT10M09B2VFR, APT10M09B2VR, APT10M30AVR
Keywords - APT10086BLC MOSFET specs
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History: IPA60R120P7
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