All MOSFET. APT10M09B2VR Datasheet

 

APT10M09B2VR Datasheet and Replacement


   Type Designator: APT10M09B2VR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 3730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TMAX
 

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APT10M09B2VR Datasheet (PDF)

 ..1. Size:38K  apt
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APT10M09B2VR

APT10M09B2VRAPT10M09LVR100V 100A 0.009WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

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APT10M09B2VR

APT10M09B2VFRAPT10M09LVFR100V 100A 0.009WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 3.2. Size:376K  inchange semiconductor
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APT10M09B2VR

isc N-Channel MOSFET Transistor APT10M09B2VFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.009(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.1. Size:146K  apt
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APT10M09B2VR

APT10M09B2VFRAPT10M09LVFR100V 100A 0.009B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layou

Datasheet: APT10078SLL , APT10086BLC , APT10086SLC , APT10090BFLL , APT10090SFLL , APT10090BLL , APT10090SLL , APT10M09B2VFR , 50N06 , APT10M30AVR , APT11N80BC3 , APT11N80KC3 , APT1201R2BLL , APT1201R2SLL , APT1201R4BLL , APT1201R4SLL , APT1201R5BVFR .

History: IRLML2502G | CSD87588N | STU6N95K5 | IPL65R725CFD | RRQ030P03TR | WMO07N60C4 | SIS472DN

Keywords - APT10M09B2VR MOSFET datasheet

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