HUF75321D3 Datasheet. Specs and Replacement
Type Designator: HUF75321D3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 685 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO251AA
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HUF75321D3 substitution
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HUF75321D3 datasheet
huf75321d3s.pdf
HUF75321D3S www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n... See More ⇒
huf75321p3 huf75321s3s.pdf
HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves the... See More ⇒
huf75321p3.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: HUF75307D3ST, HUF75307P3, HUF75307T3ST, HUF75309D3, HUF75309D3S, HUF75309D3ST, HUF75309P3, HUF75309T3ST, K4145, HUF75321D3S, HUF75321D3ST, HUF75321P3, HUF75321S3, HUF75321S3S, HUF75321S3ST, HUF75329D3, HUF75329D3S
Keywords - HUF75321D3 MOSFET specs
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